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A MESFET (Metal-Semiconductor Field-Effect Transistor) is a type of field-effect transistor that uses a metal-semiconductor junction (Schottky barrier) instead of a traditional p-n junction. It has three terminals: gate, drain, and source, similar to a JFET or MOSFET. MESFETs are commonly used in high-frequency applications, such as microwave and RF circuits, because of their ability to operate at higher speeds. They are typically made from compound semiconductors like gallium arsenide (GaAs), which allows them to perform better in high-frequency and high-power conditions compared to silicon-based transistors.